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ZTX692BSTZ is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 70V 1A E-LINE. Review the specifications below when checking this part for your BOM.
The ZTX692BSTZ is an NPN silicon planar medium-power high-gain transistor manufactured by Diodes Incorporated. It features a collector-emitter voltage (VCEO) of 70 V and supports a continuous collector current of 1 A with a peak pulse current of 2 A. The device provides a static forward current transfer ratio (hFE) ranging from 150 to 500 depending on the collector current. It operates within a temperature range of -55°C to +200°C, has a power dissipation of 1 W at 25°C ambient, and utilizes an E-Line (TO-92 compatible) package.
Verify component authenticity through authorized channels. Confirm datasheet revision DS33290 Rev. 2-3 matches procurement specifications. Ensure compliance with applicable safety standards before integration into final systems.
Evaluate thermal resistance requirements against application constraints. Verify that the 1 A continuous current rating meets load demands. Consider the 70 V breakdown voltage limits relative to circuit supply voltages.
This component belongs to the ZTX692B series of NPN silicon transistors designed for medium-power applications. It is part of Diodes Incorporated's portfolio of high-gain bipolar junction transistors intended for robust switching and amplification tasks.
The manufacturer explicitly states the ZTX692B is not recommended for new designs. Consult Diodes Incorporated or local representatives for updated alternatives or direct replacements suitable for modern implementations.
The maximum operating junction temperature is 200°C.
Yes, specific variants are qualified to AEC-Q100/101/104/200 standards and manufactured in IATF 16949 certified facilities.
The transition frequency (fT) is typically 150 MHz at IC = 50mA and VCE = 5V.
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