ZUMTS17HTA

Overview

The ZUMTS17HTA is an NPN silicon planar RF transistor manufactured by Diodes Incorporated, housed in a SOT-323 package. It operates with a collector-emitter voltage of 15 V and a continuous collector current of 25 mA. The device features a transition frequency (fT) ranging from 1.0 to 1.3 GHz at specified bias points. Static forward current transfer ratios (hFE) are documented between 20 and 200 depending on the specific variant and operating conditions. Power dissipation is rated at 330 mW at 25°C ambient temperature, with an operating junction temperature range spanning -55 to +150 °C.

Feature Summary

• Designed for radio frequency applications utilizing NPN silicon planar technology
• Provides high transition frequency performance suitable for RF signal processing
• Features low noise figure characteristics for sensitive amplification stages

Applications

• RF amplifier circuits
• Radio frequency signal processing systems
• High-frequency switching applications

Procurement Notes

Verify the exact part marking suffix against official datasheets before procurement. Confirm that the ordering code matches the required electrical specifications, as variants like ZUMTS17H differ in gain parameters. Ensure compatibility with the SOT-323 footprint during component sourcing.

Selection Notes

Select this component based on the required transition frequency and power dissipation limits. Compare hFE ranges across variants to match circuit gain requirements. Verify thermal management capabilities given the 330 mW dissipation rating and small form factor constraints.

Part Context

This component belongs to the ZUMTS17 series of RF transistors produced by Diodes Incorporated. The series includes variants such as ZUMTS17 and ZUMTS17H, which share similar physical packaging but exhibit differences in static forward current transfer ratio specifications.

Replacement Considerations

Publicly confirmed substitute part numbers for the ZUMTS17HTA are not available in the provided documentation. Evaluate alternative SOT-323 NPN RF transistors only if they meet the identical voltage, current, and frequency requirements.

FAQ

What is the maximum collector-base voltage for the ZUMTS17HTA?

The absolute maximum collector-base voltage (V_CBO) is 25 V.

How does the transition frequency vary with collector current?

The transition frequency (fT) is specified as 1.0 GHz at IC=2.0mA and increases to 1.3 GHz at IC=25mA, both measured at VCE=5.0V.

What is the typical noise figure under standard test conditions?

The typical noise figure is 4.5 dB when measured at IC=2.0mA, VCE=5.0V, with a source resistance of 50 Ω at 500MHz.