ZUMTS17NTA

$0.39

Description：RF TRANS NPN 11V 3.2GHZ SOT-323
Series：-

SKU:6cab6cf40461 Category: Bipolar RF Transistors Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 11V 3.2GHZ SOT-323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：11V
Frequency - Transition：3.2GHz
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：330mW
DC Current Gain (hFE) (Min) @ Ic, Vce：56 @ 5mA, 10V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：SOT-323
Grade：-
Qualification：-

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ZUMTS17NTA

Overview

The ZUMTS17NTA is an NPN RF transistor manufactured by Diodes Incorporated, housed in a SOT-323 surface-mount package. It features a collector-base voltage of 20V, a collector-emitter voltage of 11V, and a continuous collector current rating of 50mA. The device achieves a transition frequency (fT) of up to 3.2GHz at VCE=5V and IE=25mA. Power dissipation reaches 350mW on a standard FR4 PCB. It includes a static forward current transfer ratio (hFE) minimum of 56 and operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high-frequency RF switching applications with unity gain performance up to 3.2GHz.
Compliant with AEC-Q101 standards to ensure high reliability for automotive environments.
Manufactured using lead-free, halogen-free, and antimony-free materials meeting RoHS directives.

Applications

RF Switching
Automotive Electronics

Procurement Notes

Verify the specific ordering suffix 'TA' against the manufacturer's official documentation to confirm reel size and tape width specifications. Ensure compliance with environmental requirements such as RoHS and AEC-Q101 if used in regulated or automotive sectors. Confirm that the SOT-323 package dimensions align with the target PCB footprint layout.

Selection Notes

Select this component when an NPN RF transistor with a 3.2GHz transition frequency is required in a compact SOT-323 form factor. Consider the 11V collector-emitter breakdown voltage and 50mA maximum current limits during circuit design. Evaluate thermal resistance values to ensure adequate heat dissipation under expected operating conditions.

Part Context

This part belongs to the ZUMTS17N product line from Diodes Incorporated. It is specifically engineered as an NPN RF transistor intended for use in radio frequency switching circuits. The device utilizes a molded plastic case material classified as UL 94V-0 for flammability safety.