ZVN3310FTA

$0.82

Description：MOSFET N-CH 100V 100MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a6c09feb4b90 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

ZVN3310FTA is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 100MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ZVN3310FTA

Description：MOSFET N-CH 100V 100MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id：2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：330mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for ZVN3310FTA

ZVN3310FTA

Single FETs, MOSFETs Overview

The ZVN3310FTA is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 100 mA at 25°C. The device has a maximum static drain-source on-resistance (RDS(ON)) of 10 Ω at VGS = 10 V and ID = 500 mA. Gate-source voltage (VGSS) is rated at ±20 V, with a gate threshold voltage (VGS(th)) ranging from 0.8 V to 2.4 V. Power dissipation is 330 mW at 25°C. Operating temperature ranges from -55°C to +150°C. Input capacitance is 40 pF.

Single FETs, MOSFETs Feature Summary

Combines low input capacitance with relatively low on-resistance for efficient switching performance.
Provides intrinsically higher pulse current handling capability in linear mode compared to comparable trench technology structures.
Utilizes lead-free design compliant with RoHS standards.

Single FETs, MOSFETs Applications

General purpose 100V FET applications
Power management circuits
Disconnect switches
Telecoms equipment

Single FETs, MOSFETs Procurement Notes

Verify the component against official datasheet DS31980 Rev. 4-2 to confirm authenticity. Ensure the marking code matches 'MF' for the SOT-23 package. Confirm that the ordering suffix 'FTA' corresponds to the specified reel size and tape width details provided by the manufacturer. Cross-reference part numbers to avoid confusion with complementary types or obsolete variants.

Single FETs, MOSFETs Selection Notes

Select this component when a 100V N-channel MOSFET with low input capacitance is required. It is suitable for applications demanding high pulse current handling in linear mode. Consider the 10 Ω on-resistance limit for power loss calculations. Verify compatibility with the ZVP3310F as the complementary P-channel type if a full bridge or push-pull configuration is needed.

Single FETs, MOSFETs Part Context

This component belongs to the ZVN3310F series of N-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed for general-purpose switching applications requiring robust linear mode operation. The product line emphasizes low input capacitance and fast switching speeds within a compact SOT-23 surface-mount package.