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The ZVN4206NTC is a dual N-channel enhancement-mode MOSFET array manufactured by Diodes Incorporated. It features a maximum drain-source breakdown voltage of 60 V and a continuous drain current of 1 A at 25°C. The device has a maximum on-resistance of 1 Ohm at 1.5 A and 10 V gate drive, with a gate-source threshold voltage maximum of 3 V at 1 mA. Power dissipation is rated at 2.75 W. It operates within a temperature range of -55°C to +150°C junction temperature and is housed in an SM8 (SOT-223-8) surface-mount package.
Verify component status as the ZVN4206NTC is listed as obsolete or end-of-life by the manufacturer. Confirm availability through authorized distributors or secondary markets. Ensure that any replacement components meet the same electrical specifications and package dimensions to maintain design integrity without requiring PCB layout changes.
Select this component when a dual N-channel MOSFET solution is required in a compact SOT-223-8 package. Consider the 60 V voltage rating and 1 A current limit for appropriate load handling. Verify that the 1 Ohm on-resistance meets power loss requirements for the specific application environment.
The ZVN4206NTC belongs to the ZVN4206 series of N-channel MOSFETs from Diodes Incorporated. This series includes single-channel variants such as the ZVN4206AV and ZVN4206GTA, which share similar electrical characteristics but differ in package type and channel count. The NTC suffix specifically denotes the dual-channel array configuration in the SM8 package.
As the ZVN4206NTC is marked as obsolete, direct substitutes may be limited. Evaluate other dual N-channel MOSFETs in the SOT-223-8 package with comparable 60 V and 1 A ratings. Verify pinout compatibility and thermal performance before implementation.