Single FETs, MOSFETs ZVN4525ZTA product image

ZVN4525ZTA

$0.87
  • Description:MOSFET N-CH 250V 240MA SOT89-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:3a735befe2ac Category: Brand:

  
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ZVN4525ZTA is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 250V 240MA SOT89-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for ZVN4525ZTA

  • Description:MOSFET N-CH 250V 240MA SOT89-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):250 V
  • Current - Continuous Drain (Id) @ 25°C:240mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.4V, 10V
  • Rds On (Max) @ Id, Vgs:8.5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id:1.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:3.65 nC @ 10 V
  • Vgs (Max):±40V
  • Input Capacitance (Ciss) (Max) @ Vds:72 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):1.2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-89-3
  • Package / Case:TO-243AA

Single FETs, MOSFETs datasheet and documents for ZVN4525ZTA

ZVN4525ZTA

Single FETs, MOSFETs Overview

The ZVN4525ZTA is an N-channel enhancement mode MOSFET from Diodes Incorporated, packaged in a surface-mount SOT-89 case. It features a drain-source voltage (V(BR)DSS) of 250 V and a continuous drain current (ID) of 240 mA at +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 8.5 Ω at VGS = 10V and ID = 500mA. Total gate charge (Qg) reaches a maximum of 3.65 nC at VGS = 10V. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Low gate threshold voltage for efficient drive requirements
  • Low input capacitance supporting fast switching speed
  • Lead-free finish with RoHS compliance
  • Halogen and antimony free "Green" device construction

Single FETs, MOSFETs Applications

  • Power management functions
  • Battery operated systems
  • Solid-state relays
  • Drivers for relays, solenoids, lamps, hammers, displays, memories, transistors

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging details and quantity per reel. Confirm that the component meets required environmental standards such as RoHS and REACH regulations before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power management applications requiring low on-state resistance and superior switching performance. Ensure the design accommodates the thermal characteristics, specifically the junction-to-ambient thermal resistance, within the specified operating temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the ZVN4525Z series of N-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining fast switching capabilities, making it suitable for various discrete semiconductor transistor applications.

Single FETs, MOSFETs Replacement Considerations

Consult official manufacturer substitution guides or datasheets for verified equivalent parts. Do not assume cross-compatibility based solely on package type or general electrical ratings without verifying pinout and specific parameter limits.

Single FETs, MOSFETs FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (V(BR)DSS) is 250 V.

What is the maximum static drain-source on-resistance?

The maximum static drain-source on-resistance (RDS(ON)) is 8.5 Ω when measured at VGS = 10V and ID = 500mA.

Is the device compliant with RoHS directives?

Yes, the device has a lead-free finish and is compliant with EU Directive 2002/95/EC (RoHS) and 2011/65/EU (RoHS 2).

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