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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 4.9A/4.1A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.9A, 4.1A
- Rds On (Max) @ Id, Vgs：35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：796pF @ 25V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMC3A16DN8TA is a complementary enhancement mode MOSFET array manufactured by Diodes Incorporated, housed in an SO-8 surface-mount package. The N-channel device features a drain-source voltage of 30V and a maximum continuous drain current of 6.4A at 25°C, with a typical on-resistance of 0.035 ohms. The P-channel counterpart provides a -30V rating and a -5.4A continuous drain current, exhibiting a typical on-resistance of 0.048 ohms. Both channels are designed for low threshold operation and fast switching speeds.
Feature Summary
- Complementary N-channel and P-channel trench MOSFET structure
- Low on-resistance combined with fast switching speed
- Low gate drive requirements and low threshold voltage
- Low profile SOIC package design
Applications
- Motor Drive
- LCD backlighting
Procurement Notes
Verify the component against the official datasheet specifications to ensure compatibility with the intended circuit design. Confirm that the SO-8 package dimensions and pinout align with the PCB footprint requirements. Ensure thermal management strategies account for the specified power dissipation ratings under actual operating conditions.
Selection Notes
Select this component for applications requiring high-efficiency, low-voltage power management where fast switching is critical. Consider the specific on-resistance values at different gate voltages when designing the drive circuitry. Evaluate the thermal resistance parameters relative to the PCB copper area to ensure reliable operation within the specified temperature range.
Part Context
This part belongs to the Zetex generation of trench MOSFETs from Diodes Incorporated. It is marketed as a new generation solution combining low on-resistance with fast switching capabilities. The device is specifically engineered for high efficiency in low voltage power management applications.
Replacement Considerations
No official substitutes are listed in the documentation. When evaluating alternatives, verify that the replacement maintains the same SO-8 package outline and pin configuration. Ensure the substitute components meet or exceed the 30V breakdown voltage and current handling capabilities required by the original design.
FAQ
What is the maximum junction temperature for the ZXMC3A16DN8TA?
The operating and storage temperature range extends up to +150°C.
How does the package type affect thermal performance?
Thermal resistance varies based on PCB copper coverage; it ranges from 60°C/W to 100°C/W depending on whether one or both dies are active and the extent of copper coverage.
What is the typical input capacitance for the N-channel device?
The typical input capacitance is 796 pF, measured at VDS=25V, VGS=0V, and f=1MHz.
