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The ZXMC3A17DN8TA is a complementary enhancement mode MOSFET array manufactured by Diodes Incorporated, featuring an N-channel and a P-channel device within a single SO-8 package. The N-channel component provides a drain-source voltage of 30V with a maximum on-resistance of 0.065 ohms at 10V gate drive and a continuous current rating of 5.4A. The P-channel counterpart offers a -30V breakdown voltage, a maximum on-resistance of 0.110 ohms at -10V gate drive, and a continuous current rating of -4.4A. Both devices operate within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix TA against official Diodes Incorporated documentation to confirm the 7-inch reel size and 500-unit quantity per reel. Ensure that the part number matches the exact electrical specifications required for the target design, as variations exist within the ZXMC3A series.
Select this component when a compact complementary pair is needed for synchronous rectification or half-bridge configurations. The SO-8 package facilitates automated assembly while providing adequate thermal performance for moderate power levels. Evaluate the total gate charge values to ensure compatibility with the available driver circuitry capabilities.
This device belongs to the ZXMC3A family of complementary MOSFET arrays from Diodes Incorporated, which incorporates the former Zetex semiconductor product line. The ZXMC3A17DN8 variant specifically targets general-purpose power switching tasks requiring matched N-type and P-type characteristics in a minimal footprint.
Direct replacements must match the 30V rating, SO-8 package, and complementary configuration. Verify that substitute components meet the same on-resistance and switching speed requirements to maintain system efficiency without redesigning the PCB layout.