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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 4.1A/3.4A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.1A, 3.4A
- Rds On (Max) @ Id, Vgs：50mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：12.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：600pF @ 25V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMC3A17DN8TC is a complementary N/P-channel enhancement mode MOSFET array in an SO-8 package. The N-channel device features a drain-source voltage of 30V, continuous drain current of 5.4A at 25°C, and maximum on-resistance of 0.065Ω at VGS=4.5V. The P-channel counterpart offers -30V breakdown, -4.4A continuous current, and 0.110Ω max resistance at VGS=-4.5V. Both channels operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed utilizing unique trench structure
- Low threshold voltage enabling low gate drive requirements
Applications
- Motor drive circuits
- LCD backlighting inverters
Procurement Notes
Verify the specific ordering suffix 'TC' against the manufacturer's official documentation to confirm the reel size and quantity per reel. Ensure the component matches the SO-8 package outline dimensions specified in the datasheet. Confirm RoHS compliance status through the latest environmental declaration provided by Diodes Incorporated or Zetex.
Selection Notes
Select this dual MOSFET when space-constrained designs require complementary switching in a single surface-mount package. Evaluate thermal resistance values based on the specific PCB copper coverage and airflow conditions. Compare total gate charge parameters against available alternatives to ensure compatibility with existing driver circuitry capabilities.
Part Context
This component belongs to the ZXMC3A series of complementary MOSFETs manufactured by Diodes Incorporated (formerly Zetex). It represents a generation of trench technology designed to combine low conduction losses with rapid switching performance. The device integrates both N-channel and P-channel dies into a single compact footprint suitable for integrated power stages.
Replacement Considerations
Publicly confirmed substitute part numbers are not explicitly listed in the provided source material. When evaluating potential replacements, verify that the alternative device maintains compatible pinout configurations, voltage ratings, and thermal characteristics. Cross-reference package dimensions to ensure mechanical fit within the existing assembly.
