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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 6.8A/4.9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.8A, 4.9A
- Rds On (Max) @ Id, Vgs：24mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：12.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：608pF @ 15V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMC3F31DN8TA is a complementary dual enhancement mode MOSFET array from Diodes Incorporated, housed in a low-profile SOIC-8 package. It integrates an N-channel device (Q1) and a P-channel device (Q2). Q1 offers a drain-source breakdown voltage of 30V, continuous drain current of 7.3A at 25°C, and on-resistance of 0.024Ω at VGS=10V. Q2 provides -30V breakdown, 5.3A continuous current, and 0.045Ω on-resistance at VGS=-10V. Both devices support 4.5V gate drive capability with total gate charges of 12.9nC and 12.7nC respectively. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Complementary dual configuration integrating N-channel and P-channel enhancement mode MOSFETs in a single package
- Optimized for low on-state resistance while maintaining superior switching performance
- Capable of operation with 4.5V gate drive signals for efficient logic-level control
Applications
- DC-DC Converters
- Switching Mode Power Supplies (SMPS)
- Load Switching
- Motor Control
- Backlighting
Procurement Notes
Verify the specific ordering suffix TA against the manufacturer's latest documentation to confirm reel size and tape width specifications. Ensure that the SOIC-8 package dimensions align with the target PCB footprint requirements. Confirm RoHS compliance status through official datasheets prior to finalizing procurement orders.
Selection Notes
Select this component for applications requiring matched N/P-channel pairs in compact surface-mount designs. Evaluate thermal dissipation capabilities based on the specific PCB copper coverage and ambient air conditions. Consider the 4.5V gate drive threshold when interfacing with lower voltage logic controllers to ensure reliable switching transitions.
Part Context
This device belongs to the ZXMC3F series of complementary MOSFET arrays designed by Diodes Incorporated. It utilizes Trench MOSFET technology to minimize on-resistance without compromising switching speed. The SOIC-8 packaging allows for space-efficient integration into power management circuits compared to discrete component solutions.
Replacement Considerations
No official substitute part numbers are documented in the provided source material. When evaluating alternatives, verify that the replacement maintains the 30V voltage rating, SOIC-8 package compatibility, and comparable on-resistance values for both N-channel and P-channel devices.
