ZXMC4559DN8TA

$1.50

Description：MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Series：-

SKU:3b2723e38f27 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 3.6A/2.6A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.6A, 2.6A
Rds On (Max) @ Id, Vgs：55mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：20.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1063pF @ 30V, 1021pF @ 30V
Power - Max：1.25W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

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ZXMC4559DN8TA

Overview

The ZXMC4559DN8TA is a complementary enhancement mode MOSFET pair in an SO-8 package. The N-channel device (Q2) provides a drain-source voltage of 60V, with maximum on-resistance of 55mΩ at VGS=10V and 75mΩ at VGS=4.5V. Continuous drain current reaches 3.6A at steady state and 4.7A for short pulses. The P-channel device (Q1) offers -60V breakdown, with maximum on-resistance of 85mΩ at VGS=-10V and 125mΩ at VGS=-4.5V. Continuous drain current is rated at -2.6A steady state and -3.9A pulsed.

Feature Summary

Complementary N- and P-channel configuration designed to minimize on-state resistance while maintaining superior switching performance.
Qualified to AEC-Q101 standards for high reliability applications.
Totally lead-free and fully RoHS compliant, featuring halogen and antimony-free green molding compound.

Applications

DC-DC Converters
Power Management Functions
Backlighting

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and tape-and-reel specifications. Ensure compliance requirements match project needs, as the component is qualified to AEC-Q101 standards and meets RoHS directives. Confirm thermal derating curves align with the intended PCB copper layout and ambient operating conditions.

Selection Notes

Select this dual MOSFET when space-constrained designs require matched N- and P-channel characteristics within a single SO-8 footprint. Evaluate gate threshold voltages and on-resistance values at the specific drive voltage levels used in the target circuit. Consider the thermal resistance parameters and power dissipation limits relative to the expected continuous and pulsed load currents.

Part Context

This component belongs to the ZXMC series of complementary MOSFETs manufactured by Diodes Incorporated. It utilizes a new generation design optimized for high-efficiency power management applications. The device integrates both N-channel and P-channel enhancement mode transistors into a single molded plastic case to reduce board space.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. When evaluating cross-compatibility, verify that pin configurations, voltage ratings, and thermal characteristics match the original design requirements without modifying the existing PCB layout or drive circuitry.

FAQ

What are the maximum continuous drain current ratings for steady-state operation?

The N-channel device supports 3.6A, while the P-channel device supports -2.6A under steady-state conditions at +25°C ambient temperature.

How does the on-resistance vary with gate-source voltage?

For the N-channel device, RDS(on) increases from a maximum of 55mΩ at VGS=10V to 75mΩ at VGS=4.5V. For the P-channel device, it increases from 85mΩ at VGS=-10V to 125mΩ at VGS=-4.5V.