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Product Detailed Parameters
- Description：MOSFET N/P-CH 20V 8MSOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：130mOhm @ 1.7A, 4.5V
- Vgs(th) (Max) @ Id：700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：350pF @ 15V
- Power - Max：1.04W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package：8-MSOP
- Grade：-
- Qualification：-
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Overview
The ZXMD63C02XTC is a dual-channel enhancement mode MOSFET array from Diodes Incorporated, integrating one N-channel and one P-channel device within an MSOP-8 package. The N-channel section provides a drain-source breakdown voltage of 20V, a continuous drain current of 2.4A at 25°C, and a maximum on-resistance of 0.15Ω at VGS=2.7V. The P-channel section offers a breakdown voltage of -20V, a continuous drain current of -1.7A at 25°C, and a maximum on-resistance of 0.40Ω at VGS=-2.7V. Both channels operate within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates complementary N-channel and P-channel MOSFETs in a single low-profile surface mount package for space-constrained designs.
- Optimized for high efficiency power management applications through low on-resistance characteristics and fast switching speeds.
- Features low gate threshold voltage requirements suitable for direct logic-level drive interfaces.
Applications
- DC-DC Converters
- Power Management Functions
- Disconnect switches
- Motor control
Procurement Notes
Verify the specific ordering suffix against manufacturer documentation to confirm reel size and quantity specifications. Confirm component availability status as manufacturing lifecycles may change. Ensure compliance with environmental directives such as RoHS by checking the official datasheet declarations prior to procurement.
Selection Notes
Select this component when a matched pair of N-channel and P-channel MOSFETs is required for synchronous rectification or bridge configurations. Evaluate thermal resistance parameters relative to the PCB copper coverage and airflow conditions. Verify that the gate drive voltage levels align with the specified threshold voltages for reliable switching performance.
Part Context
This part belongs to the ZXMD63 series of high-density MOSFET arrays manufactured by Diodes Incorporated. The series utilizes a structure designed to combine low on-resistance with fast switching capabilities. The ZXMD63C02X variant specifically pairs a 20V N-channel device with a 20V P-channel device in an MSOP-8 footprint.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. When evaluating alternatives, ensure the replacement maintains compatible pinout configurations, voltage ratings, and thermal characteristics for the MSOP-8 package.
