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Product Detailed Parameters
- Description：MOSFET N/P-CH 30V 8MSOP
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：N and P-Channel
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：135mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：290pF @ 25V
- Power - Max：1.04W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Supplier Device Package：8-MSOP
- Grade：-
- Qualification：-
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Overview
The ZXMD63C03XTA is a dual N-channel and P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V for the N-channel and -30V for the P-channel. The N-channel device provides a continuous drain current of 2.3A with an on-resistance of 0.135Ω, while the P-channel device offers a continuous drain current of -2.0A with an on-resistance of 0.185Ω. Packaged in an MSOP-8 surface-mount configuration, this component is designed for high-density applications requiring low profile and efficient power management.
Feature Summary
- Combines low on-resistance with fast switching speed for high efficiency
- Features low threshold voltage and low gate drive requirements
- Utilizes a unique structure to optimize performance in low voltage environments
Applications
- DC-DC Converters
- Power Management Functions
- Disconnect Switches
- Motor Control
Procurement Notes
Verify the specific suffix 'TA' against the manufacturer's ordering information to confirm reel size and tape width specifications. Ensure that the procurement channel is authorized to maintain product integrity. Confirm compliance with RoHS directives as indicated in the datasheet documentation before finalizing acquisition.
Selection Notes
Select this component for designs requiring a compact dual MOSFET solution with low on-resistance. Verify that the 30V rating aligns with the system's maximum operating voltage. Consider the MSOP-8 package dimensions for PCB layout constraints. Evaluate thermal dissipation capabilities relative to the expected load currents in the target application environment.
Part Context
This part belongs to the ZXMD63 series of high-density MOSFETs from Diodes Incorporated. The series is engineered to provide benefits of low on-resistance combined with fast switching speeds. These components are specifically targeted at high-efficiency, low-voltage power management applications where space and performance are critical design factors.
Replacement Considerations
The datasheet explicitly states that this component is not recommended for new design and has no alternate part. Engineers must evaluate existing inventory usage or redesign the circuit using alternative discrete components if this part is unavailable. No direct cross-compatible substitutes are officially documented.
