ZXMD63N03XTA

$2.15

Description：MOSFET 2N-CH 30V 2.3A 8MSOP
Series：-

SKU:90bda596304e Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 30V 2.3A 8MSOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：2.3A
Rds On (Max) @ Id, Vgs：135mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：290pF @ 25V
Power - Max：1.04W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package：8-MSOP
Grade：-
Qualification：-

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ZXMD63N03XTA

Overview

The ZXMD63N03XTA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 30V and a continuous drain current of 2.3A at +25°C. The device offers a low on-state resistance of 135mΩ at VGS=10V and 200mΩ at VGS=4.5V. Packaged in an MSOP-8 surface-mount case, it supports a junction temperature range from -55°C to +150°C with a power dissipation of up to 1.25W under specific thermal conditions.

Feature Summary

Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
Qualified to AEC-Q101 standards for automotive and high reliability requirements.
Totally lead-free, fully RoHS compliant, and halogen/antimony free green device.

Applications

DC-DC Converters
Power Management Functions
Motor Control
Disconnect Switches

Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation before procurement. The datasheet lists both ZXMD63N03XTA (1,000 units per reel) and ZXMD63N03XTC (4,000 units per reel). Confirm that the required packaging quantity matches the intended manufacturing process or testing volume to avoid inventory discrepancies.

Selection Notes

Select this component when a dual N-channel configuration is required within a compact MSOP-8 footprint. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance level. Verify thermal management capabilities, as power dissipation ratings depend heavily on PCB copper coverage and ambient air conditions.

Part Context

This part belongs to the ZXMD63 series of dual MOSFETs from Diodes Incorporated. The series is engineered to balance low conduction losses with fast switching speeds. The ZXMD63N03XTA specifically utilizes the 'TA' suffix indicating a standard tape and reel packaging format suitable for automated assembly lines.

Replacement Considerations

Direct cross-replacement requires matching the 30V rating, dual N-channel topology, and MSOP-8 package dimensions. Evaluate alternative parts based on RDS(ON) specifications at the operating gate voltage and ensure thermal resistance characteristics are compatible with the existing board layout.

FAQ

What is the maximum pulsed drain current for the ZXMD63N03XTA?

The maximum pulsed drain current (IDM) is rated at 14A, provided the pulse width is limited to 300μs and the duty cycle does not exceed the maximum junction temperature limits.