ZXMHC10A07T8TA

Overview

The ZXMHC10A07T8 is a complementary enhancement-mode MOSFET H-Bridge featuring two N-channel and two P-channel devices in an SM-8 (SOT-223) package. The N-channel provides a maximum drain-source voltage of 100V, with on-resistance values of 0.7Ω at VGS=10V and 0.9Ω at VGS=6V. The P-channel offers -100V breakdown, with on-resistance of 1.0Ω at VGS=-10V and 1.45Ω at VGS=-6V. Total power dissipation is rated at 1.3W, operating from -55°C to +150°C.

Feature Summary

• Complementary N/P channel configuration integrated into a single SOIC package
• Low on-resistance optimized for low gate drive voltages
• Fast switching speed supported by low input capacitance

Applications

• DC Motor Control
• DC-AC Inverters

Procurement Notes

Verify the specific ordering suffix 'TA' against current Diodes Incorporated documentation to confirm reel size and quantity per reel specifications. Ensure compliance with RoHS and halogen-free requirements as defined in the manufacturer's quality definitions before finalizing procurement orders.

Selection Notes

Select this component when a compact H-Bridge solution is required for low-voltage DC applications. Evaluate thermal derating factors based on PCB copper coverage and ambient temperature conditions to ensure continuous drain current ratings are met without exceeding junction temperature limits.

Part Context

This device belongs to the ZXMHC series of complementary MOSFETs designed for efficient motor control and power inversion. It integrates four transistors into one surface-mount package to reduce board space and simplify driver circuit design compared to discrete implementations.

Replacement Considerations

No official substitutes are listed in the datasheet. When evaluating alternatives, match the 100V breakdown voltage, SM-8 package dimensions, and total gate charge characteristics to maintain switching performance and mechanical compatibility.