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Product Detailed Parameters
- Description：MOSFET 2N-CH 100V 1.6A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：100V
- Current - Continuous Drain (Id) @ 25°C：1.6A
- Rds On (Max) @ Id, Vgs：250mOhm @ 3.2A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：7.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：405pF @ 50V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN10A08DN8TA is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source breakdown voltage (BVDSS) of 100 V and a maximum continuous drain current (ID) of 2.1 A at +25°C. The device exhibits a low on-resistance (RDS(on)) of 0.25 Ω at VGS = 10 V and 3.2 A, or 0.30 Ω at VGS = 6 V and 2.6 A. It operates within a junction temperature range of -55°C to +150°C and utilizes an SO-8 surface-mount package.
Feature Summary
- Low on-resistance for high efficiency
- Fast switching speed capabilities
- Low threshold voltage and gate drive requirements
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Motor controls
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The TA suffix indicates a 500-unit reel size in a 7-inch carrier with a 12 mm tape width. Confirm compliance with environmental directives such as RoHS 3 and Halogen-free status through manufacturer quality definitions before procurement.
Selection Notes
Select this component for applications requiring a 100V rating with moderate current handling up to 2.1 A. Ensure the gate drive voltage meets the specified thresholds for optimal RDS(on) performance. Evaluate thermal dissipation requirements based on the PCB copper coverage and ambient conditions defined in the datasheet notes.
Part Context
This part belongs to the ZXMN10A series of trench MOSFETs from Diodes Incorporated. These devices utilize a unique structure combining low on-resistance with fast switching speeds. The series is designed for high-efficiency, low-voltage power management applications, offering a compact solution for modern electronic designs.
Replacement Considerations
Consult the manufacturer's datasheet for officially listed similar parts. Cross-compatibility should be verified by comparing absolute maximum ratings, electrical characteristics, and package dimensions. No direct substitute part numbers are explicitly confirmed in the provided source material.
