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ZXMN10A11KTC is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 2.4A TO252-2. Review the specifications below when checking this part for your BOM.
The ZXMN10A11KTC is a single N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TO-252-3 (DPAK) surface-mount package and operates with a drain-source voltage of 100V. The device provides a continuous drain current of 3.5A at 25°C, reducing to 2.8A at 70°C. Static drain-source on-resistance is specified as 350mΩ at VGS=10V and 450mΩ at VGS=6V. Gate-source voltage limits are ±20V, with an operating temperature range from -55°C to +150°C.
Verify the specific ordering suffix KTC against official Diodes Incorporated documentation to confirm reel size and tape width specifications. Ensure the procurement channel is authorized to maintain product integrity and traceability. Confirm compliance requirements such as RoHS and REACH status directly with the manufacturer's latest datasheets before finalizing orders.
Select this component for designs requiring a 100V N-channel MOSFET in a DPAK package. Evaluate thermal derating curves for ambient temperatures exceeding 25°C to ensure continuous current ratings remain within safe operating limits. Consider the gate threshold voltage and total gate charge when designing drive circuits for optimal switching speed and efficiency.
This part belongs to the ZXMN10A series of N-channel enhancement mode MOSFETs from Diodes Incorporated. The series utilizes UMOS technology to achieve low on-resistance while maintaining fast switching characteristics. These components are engineered for general-purpose power switching and management tasks across various industrial and consumer electronics applications.
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference pinouts, maximum ratings, and electrical parameters carefully. Do not assume functional equivalence based solely on package type or nominal voltage ratings without verifying specific datasheet values.
The maximum pulsed drain current is 9.9A, measured under pulsed conditions with a duty cycle of 0.02 and a pulse width of 300µs.
The static drain-source on-resistance is 350mΩ at VGS=10V and increases to 450mΩ at VGS=6V.
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