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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 3.7A 8DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：3.7A (Ta)
- Rds On (Max) @ Id, Vgs：120mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：299pF @ 15V
- Power - Max：1.7W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-WDFN Exposed Pad
- Supplier Device Package：DFN3020B-8
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The ZXMN2AMCTA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a DFN3020B-8 package with a nominal height of 0.8mm and a 6mm² footprint. The device provides a drain-source breakdown voltage (V(BR)DSS) of 20V and continuous drain current (ID) up to 3.7A at TA=25°C. Maximum on-resistance (RDS(on)) is specified as 120mΩ at VGS=4.5V and 300mΩ at VGS=2.5V. Total gate charge (Qg) reaches 3.1nC at VGS=4.5V. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration integrated into a compact, low-profile surface mount package
- Optimized for high efficiency power management through minimized on-state resistance and fast switching performance
- Thermally efficient design utilizing a large exposed pad for effective heat dissipation
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Portable applications
Procurement Notes
Verify the specific ordering suffix 'CTA' against official Diodes Incorporated documentation to confirm reel size, tape width, and quantity per reel specifications. Ensure compliance with RoHS and halogen-free requirements if mandated by project standards. Confirm AEC-Q101 qualification status directly from the manufacturer datasheet before procurement.
Selection Notes
Select this component when a dual N-channel MOSFET solution is required within a constrained board area. The DFN3020B-8 package offers a significantly smaller footprint compared to TSOP6 or SOT23-6 alternatives. Evaluate thermal resistance values based on the specific PCB copper coverage and layer configuration to ensure adequate heat dissipation under expected load conditions.
Part Context
This part belongs to the ZXMN2AMC product line from Diodes Incorporated. It is designed specifically for applications demanding high efficiency and superior switching performance. The dual channel architecture allows for space-saving designs in portable electronics and power management circuits where multiple switching elements are necessary.
Replacement Considerations
No official substitute part numbers are listed in the provided datasheet. When evaluating alternative components, verify that the replacement matches the 20V drain-source voltage rating, dual N-channel configuration, and DFN3020B-8 package dimensions. Ensure thermal characteristics and electrical parameters align with the original design requirements.
