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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.9A
- Rds On (Max) @ Id, Vgs：35mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：17.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：796pF @ 25V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN3A06DN8TC is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, utilizing TRENCH technology. It features a maximum drain-source voltage of 30 V and a continuous drain current of 6.2 A at 25°C. The device offers a low static drain-source on-state resistance of 0.035 Ω at VGS=10V and 0.050 Ω at VGS=4.5V. Packaged in an SOIC-8 surface mount configuration, it supports a junction temperature range of -55 to +150 °C with power dissipation up to 2.1 W.
Feature Summary
- Dual N-channel enhancement mode architecture
- TRENCH MOSFET structure for low on-resistance and fast switching
- Low gate threshold voltage enabling low gate drive requirements
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Motor control
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging format. The TC suffix indicates a reel quantity of 2500 units on 13-inch tape, while TA denotes 500 units on 7-inch tape. Confirm RoHS compliance status and ensure the component matches the required thermal and electrical specifications for the target application before procurement.
Selection Notes
Select this component for low-voltage applications requiring high efficiency and fast switching speeds. Ensure the design accommodates the specified power dissipation limits and thermal resistance values under the intended operating conditions. Verify that the gate drive voltage meets the minimum threshold requirements for optimal conduction performance.
Part Context
This part belongs to the ZXMN3 series of dual N-channel MOSFETs manufactured by Diodes Incorporated (formerly Zetex). The series utilizes advanced TRENCH technology to achieve superior performance characteristics compared to standard planar devices. The dual configuration allows for compact circuit designs in space-constrained applications.
Replacement Considerations
No official substitutes are documented. When evaluating alternatives, verify compatibility regarding pinout configuration, package dimensions, and critical electrical parameters such as breakdown voltage, on-resistance, and gate charge.
