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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.5A
- Rds On (Max) @ Id, Vgs：28mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：472pF @ 15V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN3G32DN8TA is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated (formerly Zetex). It features a SOIC-8 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 30V and a continuous drain current of 7.1A at VGS=10V and TA=25°C. The on-state resistance is specified as 0.028Ω at VGS=10V with ID=6.0A, and 0.045Ω at VGS=4.5V with ID=4.9A. Total gate charge is typically 10.5nC. The device operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency power management
- Fast switching speed capabilities
- Compatible with 4.5V gate drive logic levels
Applications
- DC-DC Converters
- Power management functions
- Motor Control
- Backlighting
Procurement Notes
Verify the specific ordering suffix 'TA' corresponds to the required reel quantity of 500 units per 7-inch tape. Confirm that the component status aligns with design requirements, as datasheet history indicates potential lifecycle changes from active to obsolete statuses over time. Ensure sourcing channels are authorized to maintain quality assurance standards.
Selection Notes
Select this component when a dual N-channel configuration in an SOIC-8 package is required for low-voltage applications. The 30V rating and 7.1A current capability suit compact power circuits. Verify thermal constraints against the junction-to-ambient resistance values provided for single or dual die operation scenarios to ensure adequate heat dissipation.
Part Context
This part belongs to the ZXMN3G series of Trench MOSFETs originally developed by Zetex Semiconductors plc. The technology emphasizes low on-resistance combined with fast switching speeds. The manufacturer was acquired by Diodes Incorporated, which continues to manage the product line under its branding while retaining the original technical specifications.
Replacement Considerations
No official substitute part numbers are listed in the documentation. When evaluating alternatives, match the 30V V(BR)DSS, SOIC-8 footprint, and dual N-channel topology. Verify that replacement devices meet the same RDS(on) thresholds at comparable VGS levels to maintain circuit performance.
