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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 2.5A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2.5A
- Rds On (Max) @ Id, Vgs：120mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：5.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：330pF @ 40V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMN6A11DN8TC is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and operates with a drain-source voltage of 60V. The device provides a continuous drain current of 3.2A at 25°C, reducing to 2.6A at 70°C. Static on-resistance is specified as 120mΩ at VGS=10V and 180mΩ at VGS=4.5V. Gate threshold voltage is typically 1V. Total gate charge is 5.7nC at VGS=10V. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Dual N-channel configuration in a compact SO-8 package
- Low on-state resistance for high efficiency power management
- Fast switching speed with low gate drive requirements
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- DC-DC converters
- Power management functions
- Motor control circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The TC suffix indicates tape and reel packaging. Confirm RoHS compliance and halogen-free status through manufacturer quality definitions. Ensure the component meets moisture sensitivity level 1 requirements for standard surface mount assembly processes.
Selection Notes
Select this component for applications requiring dual N-channel isolation within a single small outline package. Evaluate thermal performance based on PCB copper coverage, as power dissipation varies significantly between single and dual die activation. Consider the 60V breakdown voltage and 3.2A current rating for appropriate load matching.
Part Context
This part belongs to the ZXMN6A series of advanced trench MOSFETs designed by Diodes Incorporated. The series emphasizes minimized on-state resistance while maintaining superior switching performance. The ZXMN6A11 variant specifically targets high-efficiency power management solutions where space constraints and thermal efficiency are critical design parameters.
Replacement Considerations
Direct substitutes include other dual N-channel MOSFETs in SO-8 packages with comparable 60V ratings and similar RDS(ON) specifications. Verify pinout compatibility and thermal resistance characteristics before substitution. Cross-referencing with the ZXMN6A09 or ZXMN6A08 series may provide alternatives with different current handling capabilities.
