ZXMP3A16DN8TA

$1.68

Description：MOSFET 2P-CH 30V 4.2A 8SO
Series：-

SKU:35dcb6d1fbc1 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 4.2A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4.2A
Rds On (Max) @ Id, Vgs：45mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id：1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：29.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：1022pF @ 15V
Power - Max：1.8W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：-
Qualification：-

Download product information

ZXMP3A16DN8TA

Overview

The ZXMP3A16DN8TA is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a continuous drain current of -5.5A at 25°C. The device exhibits a low on-resistance of 45mΩ at VGS=-10V and -4.2A. Operating within a temperature range of -55°C to +150°C, it utilizes a low-profile SOIC-8 surface mount package.

Feature Summary

Dual P-channel configuration with trench MOSFET technology for low on-resistance and fast switching speed
Low threshold voltage enabling low gate drive requirements
Low profile SOIC package suitable for compact designs

Applications

Motor Drive
LCD backlighting

Procurement Notes

Verify the manufacturer origin as Zetex Semiconductors or Diodes Incorporated depending on the specific production batch. Confirm the RoHS compliance status and ensure the component matches the specified SOIC-8 package dimensions before integration into the design.

Selection Notes

Select this component for high-efficiency, low-voltage power management applications requiring fast switching speeds. Ensure the operating junction temperature remains within the -55°C to +150°C range and verify that the gate drive voltage meets the minimum threshold requirements for optimal performance.

Part Context

This part belongs to the new generation of trench MOSFETs from Zetex. It combines benefits of low on-resistance with fast switching speed, making it ideal for high efficiency, low voltage, power management applications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consider evaluating other dual P-channel MOSFETs with similar voltage and current ratings if replacement is necessary.