ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 2.9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2.9A
- Rds On (Max) @ Id, Vgs：85mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：24.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1021pF @ 30V
- Power - Max：1.81W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The ZXMP6A16DN8QTA is a dual P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an SO-8 package. It features a drain-source voltage of -60V and continuous drain currents of -3.9A at VGS = -10V and -3.2A at VGS = -4.5V. The device exhibits low on-resistance, with maximum values of 85mΩ at -10V gate drive and 125mΩ at -4.5V gate drive. Key electrical parameters include a total gate charge of 12.1nC at -10V, input capacitance of 1021pF, and a reverse recovery time of 29.2ns for the body diode. It operates within a temperature range of -55°C to +150°C and meets AEC-Q101 automotive standards.
Feature Summary
- Dual P-channel configuration designed for high-efficiency power management applications
- Low on-state resistance combined with fast switching performance
- Qualified to AEC-Q101 standards for high reliability in automotive environments
- RoHS compliant and halogen/antimony-free green device
Applications
- DC-DC Converters
- Power Management Functions
- Disconnect Switches
- Motor Control
Procurement Notes
Verify that the ordering suffix QTA corresponds to the specified automotive qualification and tape & reel packaging format. Confirm compliance with RoHS directives and PPAP availability requirements before finalizing procurement specifications. Ensure the component matches the exact DS36687 Rev. 2 datasheet version to guarantee parameter consistency.
Selection Notes
Select this component when a dual P-channel solution is required in an SO-8 footprint. Evaluate thermal derating curves for PCB layout constraints, as power dissipation depends heavily on copper coverage. Verify that the gate drive voltage supports the desired RDS(ON) threshold, noting the difference between -10V and -4.5V operation points.
Part Context
This part belongs to the ZXMN6/ZXMP6 series of power MOSFETs from Diodes Incorporated. It serves as a dual-channel variant optimized for space-constrained designs requiring independent control of two P-channel paths. The 'Q' suffix indicates automotive-grade qualification, distinguishing it from standard commercial variants.
Replacement Considerations
Direct substitutes must match the dual P-channel topology, -60V rating, and SO-8 package. Check equivalent RDS(ON) values at specific gate voltages (-10V/-4.5V). Verify pinout compatibility, particularly the shared source/drain configurations in the SO-8 outline. Cross-reference thermal resistance (RθJA) if operating near maximum junction temperatures.
