ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 2.9A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2.9A
- Rds On (Max) @ Id, Vgs：85mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：24.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1021pF @ 30V
- Power - Max：1.25W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
Download product information
Overview
The ZXMP6A16DN8TC is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -60V and a continuous drain current of -3.9A at 25°C. The device exhibits a typical on-resistance of 0.085Ω at VGS=-10V and 0.125Ω at VGS=-4.5V. Operating within a temperature range of -55°C to +150°C, it utilizes a low-profile SOIC-8 package.
Feature Summary
- Dual P-channel configuration with integrated body diodes
- Low on-resistance for high efficiency power management
- Fast switching speed utilizing trench MOSFET technology
- Low gate drive requirements
Applications
- DC-DC converters
- Power management functions
- Disconnect switches
- Motor control
Procurement Notes
Verify the specific ordering suffix TC against official Diodes Incorporated documentation to confirm reel tape width and quantity specifications. Ensure compatibility with standard surface mount assembly processes for the SOIC-8 package. Confirm RoHS compliance status through the manufacturer's latest product release notes before finalizing procurement orders.
Selection Notes
Select this component for applications requiring dual P-channel switching in a compact footprint. Evaluate thermal resistance values based on specific PCB copper coverage and airflow conditions. Consider the threshold voltage characteristics when designing gate drive circuits to ensure reliable turn-on under varying load conditions.
Part Context
This part belongs to the Zetex generation of trench MOSFETs acquired by Diodes Incorporated. It serves as a dual-channel alternative to single-channel devices, consolidating two independent P-channel transistors into one package to save board space in power management designs.
Replacement Considerations
Direct substitutes include other dual P-channel MOSFETs from Diodes Incorporated such as the ZXMP6A17DN8TC or ZXMP3A16DN8TC. Verify pinout compatibility and electrical parameters like RDS(on) and V(BR)DSS before implementing any cross-references.
