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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 3.7A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：3.7A
- Rds On (Max) @ Id, Vgs：55mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：44nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1580pF @ 30V
- Power - Max：1.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The ZXMP6A18DN8 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -60V and a continuous drain current of -4.8A at +25°C. The device achieves a low static drain-source on-resistance of 55mΩ at VGS = -10V, supporting high-efficiency power management applications. Packaged in a lead-free SO-8 case, it operates within a temperature range of -55°C to +150°C.
Feature Summary
- Dual configuration with optimized on-state resistance for efficient power switching
- Fast switching speed combined with low gate drive requirements
- Qualified to AEC-Q101 standards for automotive reliability
- Totally lead-free and fully RoHS compliant green device
Applications
- Disconnect switches
- Motor drive circuits
Procurement Notes
Verify the specific ordering suffix when purchasing. The base part number ZXMP6A18DN8 corresponds to standard packaging variants such as TA (500 units) or TC (2,500 units). Automotive-grade versions carry the QTC suffix. Confirm that the selected package quantity aligns with production needs before finalizing orders.
Selection Notes
Select this component for designs requiring dual P-channel control in a compact surface-mount footprint. Ensure the gate drive voltage meets the threshold requirements for the desired on-resistance. Verify thermal derating curves if operating above +25°C ambient temperature to maintain safe junction temperatures under load.
Part Context
This component belongs to the ZXMP6A series of dual P-channel MOSFETs from Diodes Incorporated. It shares the same electrical and thermal characteristics as the ZXMP6A18DN8QTC automotive variant, differing only in packaging quantity and qualification documentation. The series is designed for general-purpose high-efficiency switching.
Replacement Considerations
The ZXMP6A18DN8QTC is an electrically equivalent alternative with automotive qualification. When replacing, ensure the SO-8 pinout matches exactly. Verify that any substitute component supports the required -60V breakdown voltage and sufficient current handling for the specific application load.
