SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The ZXTD09N50DE6TA is a dual NPN low saturation switching transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) of 50V and supports a continuous collector current (IC) of 1A. The device utilizes an SOT-26 surface-mount package with a maximum power dissipation of 1.1W at +25°C. Electrical characteristics include a DC current gain (hFE) minimum of 200 at IC=500mA, VCE=2V, and a collector-emitter saturation voltage (VCE(sat)) of 270mV maximum at IC=1A, IB=50mA. The transition frequency (fT) is 215MHz at VCE=10V, IC=50mA. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix TA against official Diodes Incorporated documentation to confirm reel size and quantity specifications. Ensure compliance with RoHS3 and REACH directives as stated in the datasheet. Confirm that the component meets the required AEC-Q101 qualification if used in automotive contexts. Check for any recent Product Change Notifications (PCN) regarding manufacturing site or material updates before finalizing procurement.
Select this component when a dual NPN switch with high current handling and low saturation voltage is required in an SOT-26 footprint. Consider the 50V BVCEO rating for appropriate voltage headroom in the target circuit. Evaluate thermal management requirements based on the 1.1W power dissipation limit and PCB copper area constraints. Verify that the 215MHz transition frequency meets the switching speed demands of the application.
This part belongs to the ZXTD09 series of dual NPN transistors designed for low saturation switching applications. It is electrically and thermally identical to the standard ZXTD09N50DE6 variant, differing primarily in packaging and automotive qualification markings. The device is intended for use in portable electronics and automotive systems where space efficiency and reliability are critical.
ZTD09N50DE6QTA is a confirmed equivalent alternative from Diodes Incorporated.