ZXTD09N50DE6TA

ZXTD09N50DE6TA

$1.33
  • Description:TRANS 2NPN DUAL 50V 1A SOT-26
  • Series:-

SKU:85df9bcf6cee Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 50V 1A SOT-26
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):1A
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:270mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 500mA, 2V
  • Power - Max:1.1W
  • Frequency - Transition:215MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-23-6
  • Supplier Device Package:SOT-26
  • Grade:-
  • Qualification:-

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ZXTD09N50DE6TA

Overview

The ZXTD09N50DE6TA is a dual NPN low saturation switching transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage (BVCEO) of 50V and supports a continuous collector current (IC) of 1A. The device utilizes an SOT-26 surface-mount package with a maximum power dissipation of 1.1W at +25°C. Electrical characteristics include a DC current gain (hFE) minimum of 200 at IC=500mA, VCE=2V, and a collector-emitter saturation voltage (VCE(sat)) of 270mV maximum at IC=1A, IB=50mA. The transition frequency (fT) is 215MHz at VCE=10V, IC=50mA. Operating temperature ranges from -55°C to +150°C.

Feature Summary

  • Dual NPN configuration in a compact SOT-26 package for space-constrained designs
  • Low saturation voltage and equivalent on-resistance for efficient switching performance
  • High DC current gain ensuring effective signal amplification and drive capability
  • Qualified to AEC-Q101 standards for automotive reliability applications

Applications

  • LCD backlighting inverter circuits
  • Boost functions in DC-DC converters

Procurement Notes

Verify the specific ordering suffix TA against official Diodes Incorporated documentation to confirm reel size and quantity specifications. Ensure compliance with RoHS3 and REACH directives as stated in the datasheet. Confirm that the component meets the required AEC-Q101 qualification if used in automotive contexts. Check for any recent Product Change Notifications (PCN) regarding manufacturing site or material updates before finalizing procurement.

Selection Notes

Select this component when a dual NPN switch with high current handling and low saturation voltage is required in an SOT-26 footprint. Consider the 50V BVCEO rating for appropriate voltage headroom in the target circuit. Evaluate thermal management requirements based on the 1.1W power dissipation limit and PCB copper area constraints. Verify that the 215MHz transition frequency meets the switching speed demands of the application.

Part Context

This part belongs to the ZXTD09 series of dual NPN transistors designed for low saturation switching applications. It is electrically and thermally identical to the standard ZXTD09N50DE6 variant, differing primarily in packaging and automotive qualification markings. The device is intended for use in portable electronics and automotive systems where space efficiency and reliability are critical.

Replacement Considerations

ZTD09N50DE6QTA is a confirmed equivalent alternative from Diodes Incorporated.

ZXTD09N50DE6TAZXTD09N50DE6TA
$1.33
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