ZXTD6717E6QTA

Overview

The ZXTD6717E6QTA is a dual bipolar junction transistor (BJT) from Diodes Incorporated, featuring complementary NPN and PNP configurations within a single SOT-26-6 surface-mount package. Designed for low saturation applications, it operates with a maximum collector-emitter voltage of 15 V and a power dissipation rating of 1.7 W. The device supports continuous collector currents up to 1.25 A and 1.5 A respectively, with a minimum DC current gain of 30 and a maximum of 450. It exhibits a low collector-emitter saturation voltage of 16.5 mV and a transition frequency of 180 MHz. Qualified to AEC-Q101 standards, it functions reliably between -55°C and +150°C.

Feature Summary

• Complementary NPN/PNP dual configuration in a compact SOT-26-6 package
• Low saturation voltage characteristics for efficient switching performance
• Automotive-grade reliability certified under AEC-Q101 standards
• Wide operating temperature range suitable for harsh environments

Applications

• Automotive load switching circuits
• General-purpose low saturation transistor applications
• High-speed switching interfaces requiring complementary pairs

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive use. Cross-reference the datasheet revision date to ensure compatibility with current design constraints and regulatory compliance standards.

Selection Notes

Select this component when a complementary NPN/PNP pair is required in a minimal footprint. Ensure the 15 V voltage rating aligns with system supply limits. Verify that the 1.7 W power dissipation capability accommodates thermal management strategies. Consider the 180 MHz transition frequency for high-speed signal integrity requirements in the target application circuit.

Part Context

This part belongs to the ZXTD series of low saturation transistors manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in an SMD/SMT compatible SOT-26-6 package. The product line emphasizes high current gain and low on-resistance for efficient power management in space-constrained electronic designs.

Replacement Considerations

Consult official manufacturer substitution guides for verified equivalents. Generic cross-references may not match the specific AEC-Q101 qualification or exact saturation voltage parameters.