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ZXTN2031FTA is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is TRANS NPN 50V 5A SOT-23-3. Review the specifications below when checking this part for your BOM.
The ZXTN2031FTA is a 50V NPN medium power transistor housed in an SOT-23 surface-mount package. It supports a continuous collector current of 5A and a peak pulse current of 12A. Key electrical parameters include a collector-base breakdown voltage (BVCBO) of 80V, a collector-emitter breakdown voltage (BVCEO) of 50V, and an emitter-base breakdown voltage (BVEBO) of 7V. The device features a low saturation voltage of less than 40mV at 1A input and an equivalent on-resistance of 24mΩ. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix 'FTA' corresponds to the required reel size and quantity per reel configuration. Confirm that the component meets the necessary environmental compliance requirements, specifically regarding halogen and antimony content. Ensure the selected packaging aligns with automated assembly equipment specifications before finalizing procurement orders.
Select this component when high current switching in a compact SOT-23 footprint is required. Consider the complementary PNP type ZXTP2025F if push-pull configurations are needed. Evaluate thermal derating curves against the expected ambient temperature and PCB copper area to ensure safe operating area limits are not exceeded during operation.
This part belongs to the ZXTN2031F series of NPN medium power transistors manufactured by Diodes Incorporated. The 'FTA' suffix indicates specific packaging details, including reel dimensions and tape width. The device is designed for general-purpose switching and amplification tasks where space constraints limit the use of larger packages.
The datasheet identifies the ZXTP2025F as the complementary PNP type. Verify pinout compatibility and electrical characteristics such as VCE(sat) and hFE when substituting with other NPN transistors from different manufacturers.
The maximum collector-base breakdown voltage (BVCBO) is 80V.
Yes, the device is qualified to AEC-Q101 standards for high reliability.
The typical transition frequency (FT) is 125MHz at IC = 500mA and VCE = 10V.
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