ZXTN25012EZTA

Single Bipolar Transistors Overview

The ZXTN25012EZTA is an NPN high-gain transistor manufactured by Diodes Incorporated, housed in a SOT-89 surface-mount package. It features a collector-emitter voltage (VCEO) of 12 V and supports a continuous collector current of 6.5 A with a peak pulse current of 15 A. The device exhibits low saturation characteristics, including a VCE(sat) as low as 38 mV at 1 A and an equivalent on-resistance of 25 mΩ. Power dissipation reaches up to 2.4 W depending on thermal conditions, while the transition frequency (fT) is specified at 260 MHz. Operating temperatures range from -55 °C to +150 °C.

Single Bipolar Transistors Feature Summary

• High DC current gain capability across various operating currents
• Low saturation voltage for efficient power switching
• Robust thermal performance with high power dissipation ratings
• Lead-free and halogen-free green device construction

Single Bipolar Transistors Applications

• LED driving circuits
• Motor driving applications
• Boost converters
• Royer converters
• Camera strobe drivers
• MOSFET gate drivers

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TA' corresponds to the 1,000-unit reel quantity configuration before finalizing procurement orders. Confirm that the standard marking code '1K7' aligns with your assembly identification requirements. Ensure compliance with RoHS 2 and RoHS 3 directives if environmental regulations apply to your manufacturing facility. Cross-reference the datasheet revision DS33689 Rev. 3-2 to guarantee accurate electrical parameter validation during component selection.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high continuous current handling up to 6.5 A in a compact SOT-89 footprint. The low saturation voltage makes it suitable for applications demanding minimal power loss during conduction phases. Consider the thermal resistance values relative to your PCB copper area to ensure adequate heat dissipation. Verify that the 12 V breakdown voltage meets the maximum supply requirements of your target application without exceeding absolute maximum ratings.

Single Bipolar Transistors Part Context

This part belongs to the ZXTN250 series of NPN transistors designed for high-current switching applications. It serves as the complementary counterpart to the ZXTP25012EZ PNP device, facilitating push-pull or bridge configurations. The SOT-89 package provides a balance between thermal management capabilities and board space efficiency compared to smaller surface-mount packages.

Single Bipolar Transistors Replacement Considerations

The ZXTP25012EZ is the documented complementary PNP part within the same product family. No other direct substitute part numbers are explicitly confirmed in the provided documentation.