03N06

Q: What is the maximum pulsed drain current for the 03N06?

The maximum pulsed drain current (IDM) is 12 A, limited by the maximum junction temperature.

Q: Is the 03N06 avalanche rated?

Yes, the device is 100% avalanche tested to ensure ruggedness.

$0.31

Description：N60V,RD(MAX)<100M@10V,RD(MAX)<12
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9a1f9ab44d1a Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

Product Detailed Parameters

Description：N60V,RD(MAX)<100M@10V,RD(MAX)<12
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：80mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.6 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：458 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：1.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

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03N06

Overview

The Goford Semiconductor 03N06 is an N-channel enhancement mode power MOSFET utilizing advanced trench technology. It features a drain-source voltage of 60V and a continuous drain current of 3A at 25°C case temperature. The device offers low on-resistance, specified as less than 80mΩ at VGS=10V and less than 90mΩ at VGS=4.5V. It includes 100% avalanche testing for ruggedness and operates within a junction temperature range of -55°C to 150°C.

Feature Summary

Advanced trench technology provides excellent on-resistance and low gate charge characteristics.
100% avalanche tested to ensure high reliability and rugged performance under transient conditions.
RoHS compliant construction suitable for environmentally conscious manufacturing processes.

Applications

Power switching circuits
DC/DC converters

Procurement Notes

Verify the specific package marking and reel quantity against the manufacturer's ordering information before procurement. Confirm that the component meets RoHS compliance requirements for your assembly process. Ensure thermal management designs account for the junction-to-ambient resistance values provided in the datasheet specifications.

Selection Notes

Select this component for applications requiring a compact SOT-23 footprint with moderate current handling capabilities. Consider the threshold voltage range when designing logic-level drive circuits. Evaluate the thermal impedance curves to ensure adequate heat dissipation for the intended duty cycle and ambient temperature conditions.

Part Context

This part belongs to the Goford Semiconductor discrete semiconductor portfolio, specifically within their N-channel MOSFET line. The company focuses on power devices for industrial and consumer electronics markets. The 03N06 represents a standard offering designed for general-purpose switching applications where size and efficiency are balanced.