0912GN-15EP

0912GN-15EP

  • Description:RF MOSFET GAN 50V
  • Series:EP

SKU:dd0cd3b2f5e0 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET GAN 50V
  • Series:EP
  • Mfr:Microchip Technology
  • Package:Bulk
  • Technology:GaN
  • Frequency:960MHz ~ 1.215GHz
  • Gain:18.1dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:10 mA
  • Power - Output:19W
  • Voltage - Rated:150 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:Module
  • Supplier Device Package:-
  • Configuration:-

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0912GN-15EP

Overview

The Microchip Technology 0912GN-15EP is a Gallium Nitride (GaN) transistor designed for E Class driver applications. It operates within the 960-1215 MHz frequency range and delivers a pulsed output power of 15 Watts under 128us, 10% pulsing conditions. The device utilizes a common source configuration with a 50V drain-source bias voltage. Key electrical characteristics include a typical power gain of 18.1 dB and drain efficiency exceeding 60%. The component features an extremely compact footprint suitable for general-purpose driver roles in avionics systems.

Feature Summary

  • High-power RF performance utilizing Gallium Nitride technology
  • Excellent gain flatness across the operational bandwidth
  • Robust construction with gold metallization and eutectic die attach

Applications

  • IFF (Identification Friend or Foe) systems
  • Mode-S transponders
  • DME (Distance Measuring Equipment)
  • TACAN (Tactical Air Navigation)
  • TCAS (Traffic Collision Avoidance System)

Procurement Notes

Verify the specific package variant required, as the EP suffix denotes the 55-78029 case outline measuring 0.600 inches by 1.200 inches. Confirm that the application supports the specified 128us, 10% duty cycle pulsing requirements. Ensure the design accommodates the 50V drain bias and appropriate thermal management for the junction temperature limits defined in the datasheet.

Selection Notes

Select this component when designing avionics drivers requiring high linearity and efficiency in the L-band spectrum. The EP package offers a larger surface area compared to the E or EL variants, potentially aiding thermal dissipation. Evaluate the need for the specific 50-ohm input and output impedance matching provided by the internal lumped elements if using compatible pallets.

Part Context

This device belongs to the 0912GN series of E Class GaN transistors manufactured by Microsemi, now part of Microchip Technology. The series targets defense and aerospace markets where reliability and performance are critical. The EP designation specifically identifies the largest physical package option within this product family, providing distinct mechanical dimensions for integration into various chassis designs.

Replacement Considerations

Consult official documentation for direct substitutes. Verify compatibility with existing thermal interfaces and mounting hardware due to the specific 55-78029 case dimensions.

0912GN-15EP0912GN-15EP

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