0912GN-250V

Overview

The 0912GN-250V is an internally matched, Common Source, Class AB GaN on SiC HEMT transistor manufactured by Microchip Technology. It operates in the 960MHz to 1.215GHz frequency band and delivers 250 Watts of pulsed RF power. The device provides over 18dB gain with a 50V rating. Designed for high-frequency applications, it utilizes Gallium Nitride on Silicon Carbide technology to ensure robust performance in demanding RF environments.

Feature Summary

• Internally matched Common Source configuration
• GaN on SiC HEMT technology
• High efficiency Class AB operation

Applications

• Pulsed RF power amplification
• Military radar systems
• Electronic warfare countermeasures

Procurement Notes

Verify the specific datasheet version and internal matching network specifications against your schematic requirements. Confirm that the thermal management design supports the pulsed power dissipation characteristics defined in the official documentation. Ensure the operating voltage does not exceed the rated limits during transient conditions.

Selection Notes

Select this component when a pre-matched GaN solution is required for the 960-1215 MHz band. Consider the 250W pulsed output capability and 18dB gain as primary selection criteria. Evaluate the package compatibility and thermal resistance requirements for the intended PCB layout before finalizing the design.

Part Context

This part belongs to Microchip's portfolio of Gallium Nitride power transistors. It represents a specialized RF discrete device designed for high-power density applications. The technology leverages the wide bandgap properties of GaN on SiC to achieve superior performance compared to traditional silicon-based RF solutions.

Replacement Considerations

No public confirmed substitute part numbers are available.