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Product Detailed Parameters
- Description：RF MOSFET HEMT 50V 55-QQ
- Series：E
- Mfr：Microchip Technology
- Package：Bulk
- Technology：HEMT
- Frequency：1.03GHz ~ 1.09GHz
- Gain：18.75dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：60 mA
- Power - Output：150W
- Voltage - Rated：125 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：55-QQ
- Supplier Device Package：55-QQ
- Configuration：-
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Overview
The Microchip Technology 1011GN-125E is an E Class Earless Driver GaN Transistor designed for high-power RF applications. It operates within the 1030-1090MHz frequency band, delivering a pulsed output power of 125W with a typical power gain of 18.7 dB and drain efficiency exceeding 70%. The device utilizes a common source configuration with a 50VDD bias voltage and supports pulse widths from 128µs to 1mS at a 10% duty cycle. Key electrical characteristics include a maximum Drain-Source Voltage (VDSS) of 125 V and a maximum operating junction temperature of +200°C.
Feature Summary
- High DC Precision: - V OS Drift: ±150 nV/°C (maximum)
- Extremely Compact Size
- All gold metallization and eutectic die attach for highest reliability
Applications
- IFF Avionics Secondary Radars
- Mode-S Avionics Secondary Radars
- TCAS Avionics Secondary Radars
Procurement Notes
Verify the specific package variant required, as the datasheet lists multiple options including 55-QQP, 55-QQ, and the 90-1011GN-125EP pallet. Confirm that the ordering suffix corresponds exactly to the desired physical footprint and mounting style. Ensure compatibility with the specified 50Ω in/out lumped element plug & play pallets if applicable. Cross-reference the latest revision history on the manufacturer's website before finalizing procurement specifications.
Selection Notes
Select this component for avionics secondary radar systems requiring high linearity and efficiency in the 1030-1090MHz range. The device offers excellent gain flatness of 0.1 dB and robust load mismatch tolerance up to 5:1 VSWR. Consider the thermal management requirements given the +200°C junction temperature limit and the necessity for proper heat sinking associated with the 125W pulsed output power capability.
Part Context
This part belongs to the family of E Class Earless Driver GaN Transistors manufactured by Microsemi, now part of Microchip Technology. These transistors are engineered for demanding RF environments where size, weight, and power efficiency are critical constraints. The product line emphasizes reliability through advanced packaging technologies suitable for aerospace and defense applications.
Replacement Considerations
Consult Microsemi or authorized distributors for direct cross-references. Verify pinout compatibility and thermal resistance values when evaluating alternative GaN devices for the same avionics radar application.
FAQ
What is the typical power gain of the 1011GN-125E?
The typical power gain is 18.7 dB across the 1030-1090MHz frequency band.
What is the maximum Drain-Source Voltage rating?
The absolute maximum Drain-Source Voltage (VDSS) is rated at 125 V.
Is the device suitable for continuous wave operation?
No, the datasheet specifies pulsed output power with pulse widths ranging from 128µs to 1mS at a 10% duty cycle.
