1011GN-125EL

Overview

The Microchip Technology 1011GN-125E/EL is an E Class Earless Driver GaN transistor designed for high-power RF applications. It operates within the 1030-1090MHz frequency band, delivering a pulsed output power of 125W with a typical drain efficiency exceeding 70%. The device features a common source configuration with a 50VDD bias voltage and offers approximately 18.7 dB of power gain. Key electrical characteristics include a maximum drain-source voltage of 125V and an operating junction temperature up to +200°C. It supports pulse widths from 128µs to 1ms at a 10% duty cycle.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high reliability and performance in the L-band frequency range.
• Features extremely compact size with gold metallization and eutectic die attach for enhanced durability.
• Provides excellent gain flatness with typical droop values as low as 0.1 dB across the operational bandwidth.
• Designed for robust operation with high load mismatch tolerance and high power dissipation capabilities.

Applications

• IFF (Identification Friend or Foe) secondary radars
• Mode-S secondary radars
• TCAS (Traffic Collision Avoidance System) avionics

Procurement Notes

Verify the specific package variant required, such as the 55-QQP, 55-QQ, or pallet-mounted versions, as these affect mechanical integration. Confirm that the application environment supports the specified thermal management requirements for the +200°C junction temperature. Ensure compatibility with the 50VDC bias supply and appropriate gate drive voltages ranging from -8V to 0V. Review the datasheet for any updates regarding the transition from Microsemi to Microchip Technology specifications.

Selection Notes

Select this component when designing high-efficiency driver stages for airborne secondary surveillance radar systems. The choice is driven by the need for high pulsed power output combined with minimal gain variation across the 1030-1090MHz band. Consider the physical footprint constraints, as the device is available in very small form factors suitable for dense avionics packaging. Evaluate thermal design needs based on the 214W maximum power dissipation rating at 25°C ambient conditions.

Part Context

This part belongs to the family of E Class Earless Driver GaN transistors developed by Microsemi, now part of Microchip Technology. These devices are engineered specifically for demanding RF power amplification tasks where size, weight, and power efficiency are critical. The product line targets the aviation sector, providing reliable signal generation for identification and collision avoidance systems.

Replacement Considerations

Consult official Microchip documentation for direct cross-reference data. Verify pinout compatibility and thermal interface dimensions if substituting with other GaN transistors in the same frequency class.

FAQ

What is the typical power gain of the 1011GN-125E/EL?

The typical power gain is 18.7 dB, with excellent gain flatness showing only 0.1 dB droop across the 1030-1090MHz band.

What are the absolute maximum ratings for the drain-source voltage?

The maximum Drain-Source Voltage (VDSS) is rated at 125 V.

Is this device suitable for continuous wave (CW) operation?

No, the datasheet specifies pulsed output power with pulse widths ranging from 128µs to 1ms at a 10% duty cycle.