1011GN-30EP

Overview

The Microchip Technology 1011GN-30EP is an E-class earless driver GaN transistor designed for high-frequency RF applications. It operates within the 1030–1090 MHz frequency band and delivers a pulsed output power of 30W. The device requires a bias voltage of 50V and achieves greater than 60% efficiency across its operating frequency range. Typical power gain is specified at 18.5 dB. It supports pulsing durations of 128µs at 10% duty cycle and 32µs at 2% duty cycle. The component is housed in a module package.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high-power RF performance
• Operates as an E-class earless driver suitable for compact designs
• Delivers 30W pulsed output power with high efficiency exceeding 60%
• Supports specific short-pulse timing requirements for radar systems

Applications

• Pulsed radar transmitters
• Electronic warfare systems
• Communications infrastructure requiring high linearity

Procurement Notes

Verify the specific suffix 'EP' against the manufacturer's official datasheet to confirm the exact pinout, thermal characteristics, and mechanical dimensions associated with this module variant. Ensure that the ordering documentation explicitly references the 1011GN-30EP part number to avoid confusion with similar models in the series. Confirm compliance with relevant RoHS directives if required by your supply chain standards before finalizing procurement.

Selection Notes

Select this component when designing systems requiring high pulsed power density in the L-band frequency range. The GaN construction offers superior thermal handling compared to traditional silicon devices. Consider the 50V bias requirement and the specific pulse width capabilities when matching this driver to load networks. The earless design simplifies integration into tight form-factor applications where space is constrained.

Part Context

This device belongs to Microchip's portfolio of wide-bandgap semiconductor solutions, specifically targeting high-performance RF front-end modules. It complements other GaN transistors in the company's lineup by providing specialized driver capabilities for phased array and radar architectures. The product represents the integration of advanced material science with RF circuit design to meet stringent military and commercial communication standards.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer directly for qualified alternatives or cross-reference data. Do not assume functional equivalence with other GaN devices without verifying electrical parameters and pin compatibility through official engineering change notices.