1012GN-800V

Overview

The Microchip Technology 1012GN-800V is a high-power, internally matched, common source GaN on SiC transistor designed for avionics radar systems. It delivers 800 Watts of pulsed RF output power with 19 dB gain in the 1025-1150 MHz frequency range using a 20us pulse width and 6% duty cycle. The device operates at a drain-source voltage of 150 V and features gold metallization for superior ruggedness. Key electrical characteristics include a typical drain efficiency of 58%, an input return loss of -8 dB, and a thermal resistance of 0.21 °C/W under specified test conditions.

Feature Summary

• Internally matched common source architecture optimized for high power applications
• Gallium Nitride on Silicon Carbide construction for enhanced reliability
• Gold metallization providing superior ruggedness for avionics environments

Applications

• Avionics radar systems
• Pulsed RF power amplification
• High power microwave generation

Procurement Notes

Verify the current version directly through Microsemi or authorized distributors as specifications may change without notice. Confirm package dimensions and lead times prior to design finalization. Ensure compatibility with Roger Duriod 6006 substrate materials for optimal performance matching the provided test circuit diagrams.

Selection Notes

Select this component for applications requiring high pulsed power output within the L-band frequency spectrum. Evaluate thermal management requirements carefully given the 0.21 °C/W junction-to-case thermal resistance. Ensure biasing circuits support the specified 54 V drain voltage and gate leakage limits for reliable operation.

Part Context

This part belongs to the family of high-power RF transistors utilizing Gallium Nitride technology. It is specifically engineered to replace older silicon-based solutions in demanding radar environments where size, weight, and power efficiency are critical constraints for airborne platforms.

Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.