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The onsemi MMBT100A is a general-purpose NPN silicon bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum DC collector current of 500 mA and a collector-emitter voltage rating of 40 V. The device operates within a temperature range of -55°C to +150°C, with a power dissipation capacity of 350 mW in an SOT-23 package.
Verify the specific datasheet revision and ordering suffixes directly from onsemi official documentation before procurement. Confirm that the component meets all required environmental standards and RoHS compliance specifications for the intended application environment.
Select this component for designs requiring standard NPN switching performance in space-constrained layouts. Ensure the circuit design accounts for the 350 mW power dissipation limit and the 40 V collector-emitter voltage breakdown under worst-case operating conditions.
This part belongs to the MMBT series of small-signal transistors manufactured by onsemi. These components are widely utilized in consumer electronics and industrial control systems where reliable low-power switching and amplification are required in compact form factors.
Consult official cross-reference guides for verified substitutes such as the MMBT3904 or MMBT2222A, ensuring pinout compatibility and electrical parameter alignment with the original design requirements.