1090MP

Overview

The Microsemi Corporation 1090MP is a high-power NPN silicon RF bipolar junction transistor designed for demanding radio frequency applications. It operates with a collector-emitter breakdown voltage of 65V and delivers up to 250W of output power at frequencies ranging from 1.025GHz to 1.15GHz. The device features a minimum DC current gain of 15 at 500mA and 5V, ensuring robust performance in Class C amplifier configurations.

Feature Summary

• High power capability dissipating up to 250W
• Optimized for avionics and RF microwave applications
• Chassis mount design for thermal management

Applications

• Avionics communication systems
• RF power amplification
• Microwave transmitter stages

Procurement Notes

Verify the specific datasheet version and manufacturer lineage, as Microsemi assets have transitioned to Microchip. Confirm that the chassis mount package type matches your thermal interface requirements. Ensure the component meets all relevant aviation and military specifications if used in certified environments.

Selection Notes

Select this component when high output power is required in the UHF band. Consider the chassis mount form factor for heat dissipation needs. Evaluate the 65V breakdown limit against system supply voltages. Compare gain characteristics with alternative transistors if lower noise or different linearity is required.

Part Context

The 1090MP belongs to the family of RF and microwave transistors intended for avionics applications. It serves as a power amplification stage within larger RF systems. The device utilizes NPN silicon technology to achieve high efficiency and reliability in harsh operational environments typical of aerospace and defense electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.