10A015

10A015

  • Description:RF TRANS NPN 24V 2.7GHZ 55FT
  • Series:-

SKU:d7bfd704e5d3 Category: Brand:

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Product Detailed Parameters

  • Description:RF TRANS NPN 24V 2.7GHZ 55FT
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):24V
  • Frequency - Transition:2.7GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:9dB ~ 9.5dB
  • Power - Max:6W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 100mA, 5V
  • Current - Collector (Ic) (Max):750mA
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Stud Mount
  • Package / Case:55FT
  • Supplier Device Package:55FT
  • Grade:-
  • Qualification:-

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10A015

Overview

The Microsemi Corporation 10A015 is an RF NPN bipolar junction transistor designed for high-frequency linear amplification applications. It operates with a maximum collector-emitter voltage of 20 Volts and supports Class A linear operation up to 1000 MHz. The device delivers a power output capability of 1.5 Watts, making it suitable for radio frequency signal processing tasks within its specified voltage and frequency limits.

Feature Summary

  • High-frequency linear amplification capability
  • Class A operation support
  • NPN bipolar junction transistor structure

Applications

  • RF signal amplification
  • Linear amplifier circuits
  • Radio frequency communication systems

Procurement Notes

Verify the manufacturer part number against official Microsemi documentation to ensure authenticity. Confirm that the specific package type matches system requirements. Check for any ordering suffixes that may indicate variations in tape and reel packaging or temperature ratings. Ensure compatibility with existing circuit designs regarding voltage and current specifications before procurement.

Selection Notes

Select this component when designing circuits requiring linear RF amplification up to 1000 MHz. Consider the 20V voltage rating and 1.5W power handling capabilities during thermal management planning. Evaluate the NPN configuration suitability for the specific biasing requirements of the target application environment.

Part Context

This component belongs to the Microsemi analog mixed-signal product portfolio, specifically within the RF and microwave transistor category. It is engineered for performance in radio frequency environments where linear amplification is critical. The device represents a specialized solution for high-frequency signal processing tasks.

Replacement Considerations

Consult official Microsemi substitution guides for verified alternative part numbers. Cross-reference technical parameters such as voltage ratings, frequency limits, and power dissipation capabilities to ensure functional equivalence. Verify package compatibility and pinout configurations before implementing any substitute components.

10A01510A015

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