10A030

Overview

The Microsemi Corporation 10A030 is an NPN RF power transistor designed for high-frequency applications. It features a maximum collector-emitter breakdown voltage of 24V and a continuous collector current rating of 1.5A. The device operates with a transition frequency of 2.5GHz and delivers a maximum power output of 13W. Key electrical characteristics include a DC current gain (hFE) of 20 at 200mA and 5V, with a typical gain range of 7.8dB to 8.5dB. The component utilizes a 55FT terminal mount package and supports a junction temperature up to 200°C.

Feature Summary

• High-efficiency NPN RF power construction optimized for broadband amplification
• Robust thermal management capability supporting operation up to 200°C junction temperature
• Terminal mount packaging design facilitating direct integration into high-power chassis systems

Applications

• Broadband RF power amplification stages
• Industrial, Scientific, and Medical (ISM) equipment transmitters
• Medical imaging system power drivers

Procurement Notes

Verify the specific manufacturer lot code and date code against the original Microsemi or current authorized distributor documentation. Confirm RoHS compliance status as historical records may vary by production batch. Ensure the 55FT package dimensions match the target mechanical footprint before finalizing procurement orders.

Selection Notes

Select this component when a rugged NPN transistor with 24V breakdown and 13W power handling is required in a terminal-mount configuration. Evaluate the 2.5GHz transition frequency against the target operating band to ensure adequate gain margins. Consider the 200°C thermal limit for high-temperature environment deployments without excessive cooling infrastructure.

Part Context

The 10A030 belongs to the Microsemi discrete semiconductor portfolio, specifically within the bipolar RF transistor category. This family focuses on high-voltage, high-current RF solutions for demanding industrial and medical environments. The part represents a specialized solution for applications requiring reliable performance in narrowband ISM and MRI power amplifier circuits.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pin compatibility and electrical specifications carefully if considering alternative manufacturers.