1214-110M

Overview

The Microsemi 1214-110M is an NPN RF bipolar junction transistor designed for high-power radar applications. It operates within the 1200 to 1400 MHz frequency range, delivering a power output of 110 Watts at a voltage of 50 Volts. The device features a current rating of 330 Amperes and maintains a 10% bandwidth tolerance. Constructed with silicon technology, it utilizes a 55KT chassis mount package configuration.

Feature Summary

• Engineered for high-power radar transmitter stages
• Optimized for 1200 to 1400 MHz operational bands
• Utilizes robust chassis mount packaging for thermal management

Applications

• Radar transmitter systems
• High-power RF signal generation
• Military communication equipment

Procurement Notes

Verify component authenticity through authorized Microsemi distributors or direct manufacturer channels. Confirm datasheet revisions match specific lot codes. Request full electrical characterization reports for critical radar deployments. Ensure supply chain documentation aligns with defense procurement standards where applicable.

Selection Notes

Select this component for applications requiring 110W output in the L-band spectrum. Evaluate thermal dissipation requirements due to chassis mounting constraints. Compare against higher wattage variants like the 1214-150L if increased power density is necessary. Verify compatibility with existing biasing networks for 50V operation.

Part Context

This part belongs to the Microsemi 1214 series of RF power transistors. These devices are specialized for demanding radar environments. The series offers various power levels tailored to different transmission ranges. The 1214-110M represents a mid-range solution balancing power output and efficiency.

Replacement Considerations

The 1214-150L serves as a higher-power alternative within the same family. Cross-reference pinouts and thermal characteristics before substitution. Ensure frequency response remains compatible with system requirements.