1214-220M

Overview

The Microsemi Corporation 1214-220M is an NPN bipolar RF transistor designed for high-power applications in the 1.2GHz to 1.4GHz frequency range. It features a maximum power output of 700W and a collector current rating of 20A. The device operates with a maximum collector-emitter voltage of 70V and achieves a typical gain of 7.4dB. It utilizes a 55ST chassis mount package, supporting a junction temperature up to 200°C.

Feature Summary

• High power output capability of 700W for demanding RF applications
• Operates within the 1.2GHz to 1.4GHz frequency band
• Chassis mount construction for robust thermal management

Applications

• Radar systems operating in the L-band
• High-power RF amplifier stages
• Military communication equipment

Procurement Notes

Verify part authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific suffix matches the required electrical specifications. Check for obsolescence status as this component may be discontinued. Ensure compatibility with existing chassis mounting hardware and thermal interface materials before procurement.

Selection Notes

Select this component when high power density and wide bandwidth are required in the 1.2GHz to 1.4GHz range. Consider the 70V breakdown voltage and 20A current limits for circuit design. Evaluate thermal requirements given the 200°C junction temperature capability. Compare against lower power variants if system constraints allow for reduced size.

Part Context

This transistor belongs to Microsemi's lineup of high-power RF bipolar devices. It is engineered for rugged environments requiring reliable performance at microwave frequencies. The 55ST package provides mechanical stability for high-vibration applications common in defense and aerospace sectors.

Replacement Considerations

Public confirmed substitute part numbers: 1214-220MA.