1214-30

1214-30

$211.28
  • Description:RF TRANS NPN 50V 1.4GHZ 55AW
  • Series:-

SKU:f5dd4aa47226 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF TRANS NPN 50V 1.4GHZ 55AW
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Frequency - Transition:1.2GHz ~ 1.4GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:7dB
  • Power - Max:88W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 500mA, 5V
  • Current - Collector (Ic) (Max):4A
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:55AW
  • Supplier Device Package:55AW
  • Grade:-
  • Qualification:-

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1214-30

Overview

The Microsemi Corporation 1214-30 is a variable capacitance diode constructed from silicon with an abrupt junction profile. It features a nominal capacitance of 12 pF and a minimum breakdown voltage of 30 V. The device is configured as two series-connected elements with a center tap, housed in a small outline plastic/epoxy package (ROHS COMPLIANT PACKAGE-3) containing three terminals. Key electrical characteristics include a minimum quality factor of 1600 and a minimum capacitance ratio of 4.1.

Feature Summary

  • Utilizes an abrupt junction profile for precise variable capacitance control
  • Integrates two series-connected diode elements with a center tap configuration
  • Constructed using silicon material for stable performance

Applications

  • RF tuning circuits requiring variable capacitance
  • Voltage-controlled oscillator (VCO) designs
  • Frequency modulation applications

Part Context

This component belongs to the family of variable capacitance diodes manufactured by Microsemi. These devices are distinct from standard rectifiers or zener diodes due to their specific design for exploiting the depletion layer capacitance variation under reverse bias conditions.

1214-301214-30
$211.28
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