1214-300

Overview

The Microsemi Corporation 1214-300 is an NPN bipolar RF transistor designed for high-power applications. It features a maximum collector current of 4A and a collector-emitter breakdown voltage of 50V. The device operates within a frequency range of 1.2GHz to 1.4GHz, delivering a maximum power output of 88W. It utilizes the 55KT chassis mount package and supports a junction temperature up to 200°C. DC current gain is specified at 20 under standard test conditions.

Feature Summary

• High-power RF capability with 88W output
• Wide bandwidth operation from 1.2GHz to 1.4GHz
• Robust thermal performance supporting 200°C junction temperature
• Chassis mount construction for efficient heat dissipation

Applications

• Radar systems operating in L-band frequencies
• High-power RF amplifier stages
• Military communication transmitters
• Industrial RF heating equipment

Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm package variant matches application requirements. Check for RoHS compliance documentation. Validate datasheet revisions against design specifications. Ensure proper handling procedures for high-voltage semiconductor components during installation.

Selection Notes

Evaluate thermal management capabilities given the 88W power rating. Consider the 50V breakdown limit for circuit design safety margins. Assess the 4A current capacity against load requirements. Verify compatibility with existing chassis mounting infrastructure. Review frequency response stability across the operational band.

Part Context

This component belongs to Microsemi's line of bipolar RF transistors intended for demanding radio frequency environments. The 1214 series typically serves defense and aerospace sectors requiring reliable high-frequency power amplification. The specific model targets applications needing substantial power density within compact chassis-mounted form factors.

Replacement Considerations

No direct public substitute part numbers are confirmed. Designers should evaluate equivalent NPN RF transistors with matching 50V ratings, 88W power capabilities, and compatible 55-series chassis packages. Cross-reference electrical characteristics carefully to ensure functional parity.