1214GN-50EQP-TS

Overview

The Microchip Technology 1214GN-50EQP-TS is a GaN transistor operating in the 1200–1400 MHz band. It delivers 50W output power under 300µs, 10% pulsed conditions at a 50V bias voltage. The device features over 60% typical drain efficiency and more than 16dB of power gain. It utilizes a 55-QQP package with gold metallization and eutectic die attach for high reliability.

Feature Summary

• High-power RF performance with 50W output capability
• Excellent gain flatness across the L-band frequency range
• Robust construction using all-gold metallization and eutectic die attach

Applications

• Radar systems
• L-Band avionics
• Communications infrastructure
• Industrial applications

Procurement Notes

Verify the specific suffix against official documentation to confirm package type and lead time requirements. Confirm that the intended application environment supports the specified junction temperature limits. Ensure proper thermal management solutions are integrated into the design to handle maximum power dissipation safely.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 1.2 to 1.4 GHz range. Consider the 55-QQP form factor for compact integration. Evaluate the need for specialized test fixtures or pallets to facilitate evaluation and production testing effectively.

Part Context

This part belongs to the E Series Earless/Eared GaN Transistor family from Microsemi. These devices are engineered for demanding RF environments where size and power density are critical constraints. The series offers consistent performance metrics suitable for advanced communication and sensing technologies.

Replacement Considerations

Consult official Microchip resources for verified equivalent parts. Cross-referencing requires matching electrical characteristics and physical dimensions precisely.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDSS) is rated at 150 V.

Does the device support continuous wave operation?

The datasheet specifies performance parameters based on 300µs, 10% pulsing conditions rather than continuous wave operation.

What is the typical power gain?

The device provides over 16dB of typical power gain across its operating frequency band.