1214GN-700V

Overview

The 1214GN-700V is a Class-AB GaN-on-SiC HEMT transistor designed for L-Band pulsed primary radar systems. It provides over 18 dB gain and 700 W of pulsed RF output power at 300 μs pulse width with a 10% duty factor across the 960 MHz to 1215 MHz band. The device features internal pre-match for optimal performance and utilizes gold metallization with eutectic die attach for high reliability. Absolute maximum ratings include a drain-source voltage of 150 V, gate-source voltage of -8 to 0 V, and an operating junction temperature of 200 °C.

Feature Summary

• Internally matched common-source architecture
• Hermetically sealed construction
• Gold metallization and eutectic die attach

Applications

• L-Band pulsed primary radar systems

Procurement Notes

Verify datasheet revision status before integration. Confirm package dimensions match mechanical constraints. Validate thermal resistance parameters against system cooling design. Ensure bias conditions align with operational requirements. Check export classification compliance for intended regions.

Selection Notes

Evaluate thermal management capabilities due to high power dissipation. Consider the specific frequency range requirements of the application. Assess the need for internal matching versus external networks. Verify compatibility with existing radar drive electronics.

Part Context

This component belongs to the Microsemi (formerly Microchip) portfolio of high-performance semiconductor solutions. It is specifically engineered for aerospace and defense markets requiring rugged, reliable RF power amplification in demanding environments.

Replacement Considerations

No public confirmed substitute part numbers are available.