15C01SS-TL-E

Overview

The onsemi 15C01SS-TL-E is an NPN epitaxial planar silicon transistor designed for low-frequency general-purpose amplifier applications. It features a large current capacity and a low collector-to-emitter saturation voltage, with a typical resistance of 0.58 ohms at IC=0.7A and IB=35mA. The device is housed in an ultrasmall, slim flat-lead package measuring 1.4mm x 0.8mm x 0.6mm, ensuring minimal ON-resistance.

Feature Summary

• Low collector-to-emitter saturation voltage for efficient switching
• Ultrasmall slim flat-lead package design
• Large current capacity suitable for amplification

Applications

• Low-frequency amplifier circuits
• Muting circuit implementations

Procurement Notes

Verify the specific manufacturer designation, as this component has been associated with both Sanyo Semicon Device and onsemi in public records. Confirm RoHS compliance status and exact package dimensions against the latest official datasheet before integration to ensure compatibility with existing board layouts and regulatory requirements.

Selection Notes

Select this component when space constraints require an ultrasmall footprint alongside high current handling capabilities. The low saturation voltage makes it suitable for applications requiring minimal power loss during conduction phases. Ensure the operating frequency remains within the low-frequency range specified for optimal performance characteristics.

Part Context

This part belongs to the family of bipolar junction transistors optimized for compact surface-mount designs. It serves as a general-purpose solution for signal amplification where size and efficiency are critical. The slim flat-lead package facilitates automated assembly processes while maintaining robust electrical performance in small form factor electronics.

Replacement Considerations

Public confirmed substitute part numbers: 15C01SS, 15C01SS-TL-E.