15C02CH-TL-E

Overview

The 15C02CH-TL-E is a single NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter breakdown voltage of 15 V and a maximum continuous collector current of 700 mA. The device operates with a transition frequency of 250 MHz and supports a maximum power dissipation of 250 mW. It utilizes a 3-SPA through-hole package and maintains a junction temperature rating up to 125°C.

Feature Summary

• NPN silicon construction for general-purpose switching applications
• High DC current gain at low collector currents
• Low saturation voltage for efficient switching performance

Applications

• General-purpose switching circuits
• Low-voltage amplifier stages
• Driver circuits for small loads

Procurement Notes

Verify the obsolete status of this component before procurement planning. Confirm availability through authorized distributors or secondary market suppliers like Rochester Electronics. Ensure that any substitute parts meet the required electrical specifications and package dimensions for your specific design implementation.

Selection Notes

Select this component for designs requiring a low-voltage NPN transistor in a through-hole package. Consider the 15 V breakdown limit and 700 mA current capacity when defining circuit parameters. Evaluate thermal management requirements given the 250 mW power dissipation limit in the specified package style.

Part Context

This part belongs to the 2SD1012 family of NPN transistors. It serves as a legacy component often replaced by newer surface-mount alternatives in modern designs. The 3-SPA package provides a compact through-hole solution suitable for older equipment maintenance or specific prototyping needs where leaded components are preferred.

Replacement Considerations

The 15C02CH-TL-E is an obsolete part. A confirmed similar replacement is the 15C02CH-TL-E from onsemi, which offers comparable specifications.