15GN01CA-TB-E

$0.06

Description：RF TRANS NPN 8V 1.5GHZ 3-CP
Series：-

SKU:c6ba1208d0d7 Category: Bipolar RF Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 8V 1.5GHZ 3-CP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：8V
Frequency - Transition：1.5GHz
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：200mW
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 10mA, 5V
Current - Collector (Ic) (Max)：50mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：3-CP
Grade：-
Qualification：-

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15GN01CA-TB-E

Overview

The onsemi 15GN01CA-TB-E is a discontinued NPN single CP RF transistor designed for ultra-high frequency applications. It operates with a collector-to-emitter voltage of 8V and supports a maximum collector current of 50mA. The device features a gain-bandwidth product (fT) of up to 1.5GHz at VCE=5V and IC=10mA. Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 400, an output capacitance (Cob) of 1.6pF maximum, and an output ON resistance (Ron) of 2.0Ω. It is housed in a CP package (SC-59/TO-236/SOT-23) with a minimum packing quantity of 3,000 pieces per reel.

Feature Summary

Optimized for small signal amplification with low ON-resistance and minimal output capacitance.
Engineered for ultra-high frequency band operations with high gain-bandwidth performance.

Applications

Ultra-high frequency signal amplification circuits
RF front-end modules requiring low noise and high linearity
Wireless communication systems operating in the GHz range

Procurement Notes

This component is officially discontinued by onsemi and is no longer available for new production orders. Engineers must contact onsemi representatives directly for legacy support or information regarding end-of-life status. Verification of current availability through official channels is mandatory before attempting any procurement, as standard distribution channels do not stock this item.

Selection Notes

Designers should evaluate alternative active components due to the discontinuation of the 15GN01CA series. Selection criteria must focus on matching the original specifications, specifically the 8V VCEO rating, 50mA IC limit, and 1.5GHz fT requirement. Ensure that any replacement part maintains compatibility with the SC-59/TO-236 footprint and meets the required S-parameter performance at the target operating frequencies.

Part Context

The 15GN01CA belongs to onsemi's portfolio of RF bipolar junction transistors intended for high-frequency analog and RF switching applications. It utilizes a silicon NPN process optimized for low power dissipation and high gain. The specific TB-E suffix indicates tape-and-reel packaging for automated surface-mount assembly, conforming to JEITA and JEDEC standards for the CP package type.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Users must consult onsemi technical support for recommended cross-reference devices that match the 8V, 50mA, and 1.5GHz specifications while maintaining pinout compatibility.