15GN03CA-TB-E

15GN03CA-TB-E

$0.33
  • Description:RF TRANS NPN 10V 1.5GHZ 3-CP
  • Series:-

SKU:9593967aadcb Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF TRANS NPN 10V 1.5GHZ 3-CP
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):10V
  • Frequency - Transition:1.5GHz
  • Noise Figure (dB Typ @ f):1.6dB @ 0.4GHz
  • Gain:13dB @ 0.4GHz
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
  • Current - Collector (Ic) (Max):70mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:3-CP
  • Grade:-
  • Qualification:-

Download product information

15GN03CA-TB-E

Overview

The onsemi 15GN03CA-TB-E is an NPN RF transistor designed for surface-mount applications in the 3-CP package. It features a collector-emitter breakdown voltage of 10V and a maximum collector current of 70mA. The device supports a transition frequency of 1.5GHz with a maximum power dissipation of 200mW. Key electrical characteristics include a DC current gain (hFE) of 100 at 10mA and 5V, and a typical noise figure of 1.6dB at 0.4GHz. It delivers a gain of 13dB at 0.4GHz and operates at junction temperatures up to 150°C.

Feature Summary

  • Optimized for low-noise radio frequency amplification in compact surface-mount designs
  • Provides high-frequency performance with a 1.5GHz transition frequency
  • Engineered for efficient signal processing with defined gain and noise characteristics

Applications

  • Low-noise amplifier stages in RF circuits
  • Signal processing in wireless communication systems
  • RF front-end modules requiring small form factor components

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer product number 15GN03CA-TB-E with official onsemi documentation. Confirm RoHS3 compliance status through the provided environmental declarations. Ensure the selected packaging variant matches the specific assembly requirements, as availability may vary between tape and reel, cut tape, or Digi-Reel formats based on distributor inventory.

Selection Notes

Select this component when designing circuits that require an NPN bipolar junction transistor with a 10V collector-emitter rating and operation up to 1.5GHz. The 3-CP package suits space-constrained layouts. Evaluate the 1.6dB noise figure and 13dB gain at 0.4GHz against system sensitivity requirements. Ensure thermal management accommodates the 200mW power dissipation limit within the specified 150°C junction temperature range.

Part Context

This part belongs to the 15GN03 series of RF transistors manufactured by onsemi. It is classified under discrete semiconductor products, specifically bipolar RF transistors. The base product number is 15GN03, with the suffix indicating specific packaging and compliance attributes. It serves as a specialized component for high-frequency analog applications within the broader portfolio of onsemi's discrete semiconductor offerings.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the verified source material. Consult the official datasheet for recommended alternatives or contact the manufacturer for compatibility information regarding pinout and electrical specifications.

15GN03CA-TB-E15GN03CA-TB-E
$0.33
Buy Now